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Samsung

Samsung MZ-75E250B/AM 2.5" SATA III 250GB Internal SSD

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Samsung’s 850 EVO series SSD is the industry’s #1 best-selling SSD and is perfect for everyday computing. Powered by Samsung’s V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks.

View Product Features

  • V-NAND technology: Innovative 3D V-NAND architecture for enhanced performance.
  • Fast read/write speeds: Up to 540 MB/s read and 520 MB/s write.
  • High performance: Excellent random read/write IOPS performance.
  • Reliable and durable: Backed by a 5-year limited warranty and high endurance ratings.
  • Energy efficient design: Optimized power management for longer notebook battery life.
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About the Samsung MZ-75E250B/AM 2.5" SATA III 250GB Internal SSD

The Samsung MZ-75E250B/AM is a 2.5-inch Serial ATA III internal solid-state drive offering 250 gigabytes of storage, designed as a direct replacement for traditional hard disk drives in laptops and desktop computers to deliver a transformative performance upgrade. This model belongs to a generation that leveraged Samsung's vertically integrated technology, featuring the company's proprietary 3D V-NAND (Vertical NAND) flash memory architecture. This architecture stacks memory cells in layers, enabling higher densities, improved endurance, and faster data transfer speeds compared to older planar NAND designs. The drive's primary function is to drastically reduce system boot times, accelerate application launches, and improve overall system responsiveness by eliminating the mechanical latency inherent in spinning hard drives, offering users a noticeable improvement in everyday computing efficiency.

At the core of the drive's performance is a capable Samsung controller paired with the V-NAND flash, optimized to handle both sequential read/write operations and the random 4K read/write workloads that dominate typical OS and application usage. The SATA III interface, with a maximum theoretical bandwidth of 6 gigabits per second, serves as the communication link to the host system's motherboard. While this interface is a limiting factor compared to modern NVMe drives, the drive is engineered to saturate a significant portion of this bandwidth, providing sequential transfer speeds that are multiple times faster than any SATA-based hard drive. Advanced features like a generous SLC (Single-Level Cell) caching buffer accelerate write speeds during short bursts of activity, while built-in error correction and wear-leveling algorithms work transparently to ensure data integrity and maximize the drive's operational lifespan.

The drive is packaged in a standard 7mm-height 2.5-inch form factor, ensuring broad compatibility with most laptops and desktops that have a 2.5-inch drive bay. It requires no additional drivers for basic functionality in modern operating systems and includes Samsung's Magician software, which provides tools for drive health monitoring, performance optimization, and firmware updates. For users seeking a reliable, energy-efficient, and quiet storage solution to revitalize an older system or build a cost-effective new one, this SSD represents a balanced offering of trusted brand reliability, proven SATA interface compatibility, and a significant leap in performance over hard drive technology, all centered around the efficient 3D V-NAND foundation.

Key Features

  • V-NAND technology: Innovative 3D V-NAND architecture for enhanced performance.
  • Fast read/write speeds: Up to 540 MB/s read and 520 MB/s write.
  • High performance: Excellent random read/write IOPS performance.
  • Reliable and durable: Backed by a 5-year limited warranty and high endurance ratings.
  • Energy efficient design: Optimized power management for longer notebook battery life.

Samsung MZ-75E250B/AM 2.5" SATA III 250GB Internal SSD Specs

Storage & Interface
Form Factor
2.5-inch (7mm height)
Interface
SATA III (6 Gb/s)
Total Capacity
250 GB
NAND Flash Type
Samsung 3D V-NAND
Performance Specifications
Sequential Read Speed
Up to 540 MB/s
Sequential Write Speed
Up to 520 MB/s
Random Read IOPS
Up to 98,000 (4KB QD32)
Random Write IOPS
Up to 88,000 (4KB QD32)
Reliability & Endurance
Mean Time Between Failures (MTBF)
1.5 million hours
Total Bytes Written (TBW)
75 Terabytes
Operating Shock
1500 G / 0.5 ms
Power & Environmental
Active Power Consumption
2.5W (Typical)
Idle Power Consumption
0.05W (Typical)
Operating Temperature
32°F to 158°F (0°C to 70°C)
Storage Temperature
-40°F to 185°F (-40°C to 85°C)
Physical Dimensions
Dimensions (LxWxH)
100.0 x 69.85 x 6.8 mm
Weight
1.66 oz (47g)
Encryption Support
AES 256-bit Full Disk Encryption

Key Features

  • V-NAND technology: Innovative 3D V-NAND architecture for enhanced performance.
  • Fast read/write speeds: Up to 540 MB/s read and 520 MB/s write.
  • High performance: Excellent random read/write IOPS performance.
  • Reliable and durable: Backed by a 5-year limited warranty and high endurance ratings.
  • Energy efficient design: Optimized power management for longer notebook battery life.
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